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SI6467DQ Datasheet(PDF) 1 Page - Fairchild Semiconductor

No. de pieza SI6467DQ
Descripción Electrónicos  P-Channel 1.8V Specified PowerTrench MOSFET
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

SI6467DQ Datasheet(HTML) 1 Page - Fairchild Semiconductor

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April 2001
2001 Fairchild Semiconductor Corporation
Si6467DQ Rev A (W)
Si6467DQ
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• –9.2 A, –20 V.
RDS(ON) = 12 m
Ω @ V
GS = –4.5 V
RDS(ON) = 15 m
Ω @ V
GS = –2.5 V
RDS(ON) = 21.5 m
Ω @ V
GS = –1.8 V
• Rds ratings for use with 1.8 V logic
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D
S
S
G
D
S
S
D
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
– Continuous
(Note 1)
9.2
A
– Pulsed
50
PD
Power Dissipation
(Note 1a)
1.3
W
(Note 1b)
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
96
°C/W
(Note 1b)
208
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
6467
Si6467DQ
13’’
12mm
3000 units


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