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SI6467DQ Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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SI6467DQ Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page April 2001 2001 Fairchild Semiconductor Corporation Si6467DQ Rev A (W) Si6467DQ P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Applications • Load switch • Motor drive • DC/DC conversion • Power management Features • –9.2 A, –20 V. RDS(ON) = 12 m Ω @ V GS = –4.5 V RDS(ON) = 15 m Ω @ V GS = –2.5 V RDS(ON) = 21.5 m Ω @ V GS = –1.8 V • Rds ratings for use with 1.8 V logic • Low gate charge • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package D S S G D S S D TSSOP-8 Pin 1 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current – Continuous (Note 1) –9.2 A – Pulsed –50 PD Power Dissipation (Note 1a) 1.3 W (Note 1b) 0.6 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 96 °C/W (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6467 Si6467DQ 13’’ 12mm 3000 units |
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