SI4104DY-T1-E3 datasheet(4/10 Pages) VISHAY

No. de pieza	SI4104DY-T1-E3

Descripción Electrónicos	N-Channel 100-V (D-S) MOSFET

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Document Number: 69936

S09-0764-Rev. B, 04-May-09

Vishay Siliconix

Si4104DY

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.2

0.001

10

100

0.00

0.2

0.4

0.6

0.8

25 °C

150 °C

VSD - Source-to-Drain Voltage (V)

1

0.1

0.01

TJ - Temperature (°C)

- 1.3

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

0.8

- 50

- 25

0

25

50

75

100

125

150

ID =250 µA

ID =5 mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

VGS - Gate-to-Source Voltage (V)

0.0

0.1

0.2

0.3

0.4

0.5

567

8

910

125 °C

25 °C

ID = 5 A

0

20

40

60

80

100

0

1

0

.

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

1ms

TA = 25 °C

Single Pulse

10 ms

100 ms

DC

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1s

10 s

Limited byRDS(on)*

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SI4104DY-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix

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