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IRF9952QTRPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF9952QTRPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  HEXFET® Power MOSFET 08/09/10 IRF9952QPbF Description D1 N-CHANNEL MOSFET P-CHANNEL MOSFET D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 N-Ch P-Ch VDSS 30V -30V RDS(on) 0.10Ω 0.25Ω SO-8 l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. N-Channel P-Channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TA = 25°C 3.5 -2.3 TA = 70°C 2.8 -1.8 Pulsed Drain Current IDM 16 -10 Continuous Source Current (Diode Conduction) IS 1.7 -1.3 TA = 25°C 2.0 TA = 70°C 1.3 Single Pulse Avalanche Energy EAS 44 57 mJ Avalanche Current IAR 2.0 -1.3 A Repetitive Avalanche Energy EAR 0.25 mJ Peak Diode Recovery dv/dt dv/dt 5.0 -5.0 V/ ns Junction and Storage Temperature Range TJ,TSTG -55 to + 150 °C Continuous Drain Current Maximum Power Dissipation A ID PD V W Symbol Maximum Units Thermal Resistance Ratings Parameter Symbol Limit Units Maximum Junction-to-Ambient RθJA 62.5 °C/W www.irf.com 1 PD - 96115A |
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