2SC3326

2007-11-01

1

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process)

2SC3326

For Muting and Switching Applications

• Small package

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

20

V

Emitter-base voltage

25

V

Collector current

300

mA

Base current

60

mA

Collector power dissipation

150

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Unit: mm

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)