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AD5245BRJ100-RL7 Datasheet(PDF) 3 Page - Analog Devices |
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AD5245BRJ100-RL7 Datasheet(HTML) 3 Page - Analog Devices |
3 / 20 page AD5245 Rev. B | Page 3 of 20 ELECTRICAL CHARACTERISTICS 5 kΩ VERSION VDD = 5 V ± 10% or 3 V ± 10%, VA = VDD, VB = 0 V, –40°C < TA < +125°C, unless otherwise noted. Table 1. Parameter Symbol Conditions Min Typ1 Max Unit DC CHARACTERISTICS—RHEOSTAT MODE Resistor Differential Nonlinearity2 R-DNL RWB, VA = no connect –1.5 ±0.1 +1.5 LSB Resistor Integral Nonlinearity2 R-INL RWB, VA = no connect –4 ±0.75 +4 LSB Nominal Resistor Tolerance3 ∆RAB TA = 25°C –30 +30 % Resistance Temperature Coefficient (∆RAB/RAB)/∆T × 106 VAB = VDD, wiper = no connect 45 ppm/°C Wiper Resistance RW 50 120 Ω DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE (Specifications Apply to All VRs) Differential Nonlinearity4 DNL –1.5 ±0.1 +1.5 LSB Integral Nonlinearity4 INL –1.5 ±0.6 +1.5 LSB Voltage Divider Temperature Coefficient (∆VW/VW)/∆T × 106 Code = 0x80 15 ppm/°C Full-Scale Error VWFSE Code = 0xFF –6 –2.5 0 LSB Zero-Scale Error VWZSE Code = 0x00 0 2 6 LSB RESISTOR TERMINALS Voltage Range5 VA, VB, VW GND VDD V Capacitance A, B6 CA, CB f = 1 MHz, measured to GND, code = 0x80 90 pF Capacitance W6 CW f = 1 MHz, measured to GND, code = 0x80 95 pF Shutdown Supply Current7 IA_SD VDD = 5.5 V 0.01 1 µA Common-Mode Leakage ICM VA = VB = VDD/2 1 nA DIGITAL INPUTS AND OUTPUTS Input Logic High VIH VDD = 5 V 2.4 V Input Logic Low VIL VDD = 5 V 0.8 V Input Logic High VIH VDD = 3 V 2.1 V Input Logic Low VIL VDD = 3 V 0.6 V Input Current IIL VIN = 0 V or 5 V ±1 µA Input Capacitance6 CIL 5 pF POWER SUPPLIES Power Supply Range VDD RANGE 2.7 5.5 V Supply Current IDD VIH = 5 V or VIL = 0 V 3 8 µA Power Dissipation8 PDISS VIH = 5 V or VIL = 0 V, VDD = 5 V 44 µW Power Supply Sensitivity PSS VDD = +5 V ± 10%, code = midscale ±0.02 ±0.05 %/% DYNAMIC CHARACTERISTICS6, 9 Bandwidth –3 dB BW_5K RAB = 5 kΩ, code = 0x80 1.2 MHz Total Harmonic Distortion THDW VA = 1 V rms, VB = 0 V, f = 1 kHz 0.1 % VW Settling Time tS VA = 5 V, VB = 0 V, ±1 LSB error band 1 µs Resistor Noise Voltage Density eN_WB RWB = 2.5 kΩ, RS = 0 6 nV/√Hz 1 Typical specifications represent average readings at 25°C and VDD = 5 V. 2 Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. 3 VAB = VDD, wiper (VW) = no connect. 4 INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. VA = VDD and VB = 0 V. DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions. 5 Resistor Terminals A, B, and W have no limitations on polarity with respect to each other. 6 Guaranteed by design and not subject to production test. 7 Measured at the A terminal. The A terminal is open circuited in shutdown mode. 8 PDISS is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation. 9 All dynamic characteristics use VDD = 5 V. |
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