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STB16NF06LT4 Datasheet(PDF) 5 Page - STMicroelectronics |
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STB16NF06LT4 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 13 page STB16NF06L Electrical characteristics 5/13 Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 16 64 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 16A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 16A, di/dt = 100A/µs, VDD = 16V, Tj = 150°C (see Figure 14) 50 67.5 2.7 ns nC A |
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