STH310N10F7-2 datasheet(3/19 Pages) STMICROELECTRONICS

No. de pieza	STH310N10F7-2

Descripción Electrónicos	N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK-6 packages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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DocID024040 Rev 2

3/19

STH310N10F7-2, STH310N10F7-6

Electrical ratings

19

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DS

Drain-source voltage

100

V

GS

Gate-source voltage

± 20

V

I

D

(1)

1.

Current limited by package.

Drain current (continuous) at T

C

= 25°C

180

A

I

D

(1)

Drain current (continuous) at T

C

=100°C

120

A

I

DM

(2)

2.

Pulse width limited by safe operating area.

Drain current (pulsed)

720

A

P

TOT

Total dissipation at T

C

= 25°C

315

W

Derating factor

2.1

W/°C

E

AS

(3)

3.

Starting T

J

=25°C, I

D

=60 A, V

DD

=50 V

Single pulse avalanche energy

(T

J

= 25 °C, L=0.55 mH, I

as

=65 A )

1J

T

j

T

stg

Operating junction temperature

storage temperature

- 55 to 175

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

R

thj-case

Thermal resistance junction-case

0.48

°C/W

R

thj-pcb

(1)

1.

When mounted on 1 inch² FR-4 board, 2oz Cu

Thermal resistance junction-pcb max

35

°C/W

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