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STF18NM60ND Datasheet(PDF) 5 Page - STMicroelectronics |
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STF18NM60ND Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 22 page DocID024653 Rev 1 5/22 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) Turn-on delay time VDD = 300 V, ID = 6.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) -55 - ns tr Rise time - 15.5 - ns td(off) Turn-off delay time - 13 - ns tf Fall time - 18 - ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit ISD Source-drain current - 13 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 52 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 13 A, VGS=0 - 1.6 V trr Reverse recovery time ISD =13 A, di/dt =100 A/µs, VDD = 100 V (see Figure 19) -136 ns Qrr Reverse recovery charge - 843 nC IRRM Reverse recovery current - 12.5 A trr Reverse recovery time VDD = 100 V di/dt =100 A/µs, ISD = 13 A Tj = 150 °C (see Figure 19) -198 ns Qrr Reverse recovery charge - 1425 nC IRRM Reverse recovery current - 14.5 A |
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