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MTSF3203 Datasheet(Hoja de datos) 2 Page - Motorola, Inc

No. de Pieza. MTSF3203
Descripción  SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM
Descarga  8 Pages
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Fabricante  MOTOROLA [Motorola, Inc]
Página de inicio  http://www.freescale.com
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 2 page
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MTSF3203
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Drain–to–Source Voltage
VDSS
20
V
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
VDGR
20
V
Gate–to–Source Voltage — Continuous
VGS
± 12
V
1 inch SQ.
FR–4 or G–10 PCB
Figure 1 below
Steady State
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
RTHJA
PD
ID
ID
IDM
70
1.79
14.29
4.9
3.9
24.4
°C/W
Watts
mW/
°C
A
A
A
Minimum
FR–4 or G–10 PCB
Figure 2 below
Steady State
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
RTHJA
PD
ID
ID
IDM
160
0.78
6.25
3.2
2.5
16
°C/W
Watts
mW/
°C
A
A
A
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 4.9 Apk, L = TBD mH, RG = 25 W)
EAS
TBD
mJ
(1) Repetitive rating; pulse width limited by maximum junction temperature.
Figure 1. 1.0 Inch Square FR–4 or G–10 PCB
Figure 2. Minimum FR–4 or G–10 PCB




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