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AM29F010-120DTE1 Datasheet(PDF) 7 Page - Advanced Micro Devices |
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AM29F010-120DTE1 Datasheet(HTML) 7 Page - Advanced Micro Devices |
7 / 8 page 1/13/98 Am29F010 Known Good Die 7 S U PPL EM EN T PHYSICAL SPECIFICATIONS Die dimensions . . . . . . . . . . . . . . 174 mils x 189 mils 4.42 mm x 4.80 mm Die Thickness . . . . . . . . . . . . . ~20 mils or ~0.51 mm Bond Pad Size . . . . . . . . . . . . . . 4.47 mils x 4.47 mils 113.48 µm x 113.48 µm Pad Area Free of Passivation . . . . . . . . . .19.98 mils2 12,878 µm2 Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30 Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Si/Cu Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal, may be grounded (optional) Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride DC OPERATING CONDITIONS VCC (Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V Junction Temperature Under Bias . . TJ (max) = 130°C For Read-only . . . . . . . . . . . TJ (max) = 140°C Operating Temperature . . . Commercial 0 °C to +70°C Industrial –40 °C to +85°C Extended –55 °C to +125°C MANUFACTURING INFORMATION Manufacturing and Test. . . . . . . . . Fab 14, Austin, TX Manufacturing ID. . . . . . . . . . . . . . . . . . . . . . 98108AK Preparation for Shipment . . . . . . . . Penang, Malaysia Fabrication Process . . . . . . . . . . . . . . . . . CS19AFDS Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 SPECIAL HANDLING INSTRUCTIONS Processing Do not expose KGD products to ultraviolet light or process them at temperatures greater than 250 °C. Failure to adhere to these handling instructions will result in irreparable damage to the devices. For best yield, AMD recommends assembly in a Class 10K clean room with 30% to 60% relative humidity. Storage Store at a maximum temperature of 30 °C in a nitrogen- purged cabinet or vacuum-sealed bag. Observe all standard ESD handling procedures. |
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