BTA12-600BW datasheet(2/12 Pages) STMICROELECTRONICS

No. de pieza	BTA12-600BW

Descripción Electrónicos	Medium current triac

Download	12 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

Logo

2 / 12 page

Characteristics

BTA12, BTB12, T12xx

2/12

1

Characteristics

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current

(full sine wave)

I2PAK / D2PAK /

TO-220AB

Tc = 105° C

12

A

TO-220AB Ins.

Tc = 90° C

ITSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25° C)

F = 50 Hz

t = 20 ms

120

A

F = 60 Hz

t = 16.7 ms

126

I2tI2t Value for fusing

tp = 10 ms

78

A²s

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 120 Hz

Tj = 125° C

50

A/µs

VDSM/VRSM

Non repetitive surge peak off-state

voltage

tp = 10 ms

Tj = 25° C

VDRM/VRRM

+ 100

V

IGM

Peak gate current

tp = 20 µs

Tj = 125° C

4

A

PG(AV)

Average gate power dissipation

Tj = 125° C

1

W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Table 3.

Electrical characteristics (Tj = 25°C, unless otherwise specified)

Snubberless and logic level (3 quadrants)

Symbol

Test conditions

Quadrant

T12xx

BTA12 / BTB12

Unit

T1210

T1235

T1250

TW

SW

CW

BW

IGT

(1)

1.

Minimum IGT is guaranted at 5% of IGT max

VD = 12 V

RL = 30 Ω

I - II - III

MAX.

10

35

50

5

10

35

50

mA

VGT

I - II - III

MAX.

1.3

V

VGD

VD = VDRM

RL = 3.3 kΩ

Tj = 125° C

I - II - III

MIN.

0.2

V

IH

(2)

2.

for both polarities of A2 referenced to A1

IT = 100 mA

MAX.

15

35

50

10

15

35

50

mA

IL

IG = 1.2 IGT

I - III

MAX.

25

50

70

10

25

50

70

mA

II

30

60

80

15

30

60

80

dV/dt (2)

VD = 67 %VDRM gate open

Tj = 125° C

MIN.

40

500

1000

20

40

500

1000

V/µs

(dI/dt)c (2)

(dV/dt)c = 0.1 V/µs

Tj = 125° C

MIN.

6.5

3.5

6.5

A/ms

(dV/dt)c = 10 V/µs

Tj = 125° C

2.9

1

2.9

Without snubber

Tj= 125° C

6.5

12

6.5

12

Número de pieza similar - BTA12-600BW

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	BTA12-600BW	116Kb / 7P	12A TRIACS
Kersemi Electronic Co.,...	BTA12-600BW	1,011Kb / 5P	12A TRIACS
Inchange Semiconductor ...	BTA12-600BW	107Kb / 1P	With TO-220AB insulated package
HAOPIN MICROELECTRONICS...	BTA12-600BW	490Kb / 5P	Blocking voltage to 600 V
ON Semiconductor	BTA12-600BW3G	146Kb / 6P	Triacs Silicon Bidirectional Thyristors August, 2008 ??Rev. 0

More results

Descripción similar - BTA12-600BW

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Nell Semiconductor Co.,...	20T	595Kb / 5P	Medium current triac
STMicroelectronics	T1610T-8T	329Kb / 9P	Medium current Triac October 2014 Rev 1
	T1635T-8FP	269Kb / 9P	Medium current Triac January 2015 Rev 3
	T1610T-8FP	357Kb / 9P	Medium current Triac February 2015 Rev 2
	T1635T-8T	272Kb / 9P	Medium current Triac July 2014 Rev 3
Renesas Technology Corp	BCR8PM-14LD	133Kb / 8P	Triac Medium Power Use
	BCR30AM-12LA	107Kb / 7P	Triac Medium Power Use
	BCR5PM-12LA	111Kb / 8P	Triac Medium Power Use
	BCR16PM-12LA	103Kb / 8P	Triac Medium Power Use
	BCR10KM-12LA	140Kb / 8P	Triac Medium Power Use

More results

BTA12-600BW Datasheet(PDF) 2 Page - STMicroelectronics

BTA12-600BW Datasheet(HTML) 2 Page - STMicroelectronics

Número de pieza similar - BTA12-600BW

Descripción similar - BTA12-600BW

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Descarga

Enlace URL