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Si8640BC-B-IS1 Datasheet(PDF) 9 Page - STMicroelectronics |
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Si8640BC-B-IS1 Datasheet(HTML) 9 Page - STMicroelectronics |
9 / 44 page Rev. 1.6 9 Si8640/41/42/45 Table 3. Electrical Characteristics (VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 °C) Parameter Symbol Test Condition Min Typ Max Unit VDD Undervoltage Threshold VDDUV+ VDD1, VDD2 rising 1.95 2.24 2.375 V VDD Undervoltage Threshold VDDUV– VDD1, VDD2 falling 1.88 2.16 2.325 V VDD Undervoltage Hysteresis VDDHYS 50 70 95 mV Positive-Going Input Thresh- old VT+ All inputs rising 1.4 1.67 1.9 V Negative-Going Input Thresh- old VT– All inputs falling 1.0 1.23 1.4 V Input Hysteresis VHYS 0.38 0.44 0.50 V High Level Input Voltage VIH 2.0 — — V Low Level Input Voltage VIL —— 0.8 V High Level Output Voltage VOH loh = –4 mA VDD1,VDD2 –0.4 3.1 — V Low Level Output Voltage VOL lol = 4 mA — 0.2 0.4 V Input Leakage Current IL —— ±10 µA Output Impedance1 ZO —50 — Enable Input High Current IENH VENx =VIH —2.0 — µA Enable Input Low Current IENL VENx =VIL —2.0 — µA DC Supply Current (All inputs 0 V or at supply) Si8640Bx, Ex, Si8645Bx VDD1 VDD2 VDD1 VDD2 VI = 0(Bx), 1(Ex) VI = 0(Bx), 1(Ex) VI = 1(Bx), 0(Ex) VI = 1(Bx), 0(Ex) — — — — 1.0 2.4 6.1 2.5 1.6 3.8 9.2 4.0 mA Si8641Bx, Ex VDD1 VDD2 VDD1 VDD2 VI = 0(Bx), 1(Ex) VI = 0(Bx), 1(Ex) VI = 1(Bx), 0(Ex) VI = 1(Bx), 0(Ex) — — — — 1.4 2.3 5.2 3.6 2.2 3.7 7.8 5.4 mA Si8642Bx, Ex VDD1 VDD2 VDD1 VDD2 VI = 0(Bx), 1(Ex) VI = 0(Bx), 1(Ex) VI = 1(Bx), 0(Ex) VI = 1(Bx), 0(Ex) — — — — 1.8 1.8 4.4 4.4 2.9 2.9 6.6 6.6 mA Notes: 1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. 2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, load, and ambient temperature. 3. Start-up time is the time period from the application of power to valid data at the output. |
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