STPSC20H065CT datasheet(4/8 Pages) STMICROELECTRONICS

No. de pieza	STPSC20H065CT

Descripción Electrónicos	650 V power Schottky silicon carbide diode

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Characteristics

STPSC20H065C

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Doc ID 023605 Rev 2

Figure 5.

Junction capacitance versus

reverse voltage applied (typical

values, per diode)

Figure 6.

Relative variation of thermal

impedance junction to case

versus pulse duration per diode

0

50

100

150

200

250

300

350

400

450

500

0.1

1.0

10.0

100.0

1000.0

F=1 MHz

V

OSC=30 mVRMS

T

j=25 °C

VR(V)

Cj (pF)

Z

th(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

Figure 7.

Non-repetitive peak surge forward

current versus pulse duration per

diode (sinusoidal waveform)

Figure 8.

Total capacitive charges versus

reverse voltage applied (typical

values per diode)

IFSM(A)

1.E+01

1.E+02

1.E+03

1.E-05

1.E-04

1.E-03

1.E-02

T

a=25 °C

T

a=125 °C

tp(s)

0

4

8

12

16

20

24

28

32

0

50

100

150

200

250

300

350

400

VR (V)

Qcj (nC)

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STPSC20H065CT Datasheet(PDF) 4 Page - STMicroelectronics

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