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SI2323CDS-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI2323CDS-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 10 page Vishay Siliconix Si2323CDS www.vishay.com 4 Document Number: 65700 S13-2081-Rev. B, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 TJ = 150 °C VSD - Source-to-Drain Voltage (V) TJ = 25 °C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.03 0.06 0.09 0.12 0.15 01 2 3 45 VGS- Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =4.6 A 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 Time (s) TA = 25 °C Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 ms 10 s, DC Limited byRDS(on)* BVDSS Limited 1ms 100 µs 1s 10 ms |
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