LTC3547

3

3547fa

2.5

100

90

80

70

60

50

40

30

45

3547 G02

3

3.5

4.5

5.5

TEMPERATURE (ºC)

–50

60

50

55

45

40

35

30

25

20

25

75

3547 G03

–25

0

50

100

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Channel 1 (Note 4)

Top Switch On-Resistance

Bottom Switch On-Resistance

Channel 2 (Note 4)

Top Switch On-Resistance

Bottom Switch On-Resistance

0.8

0.75

0.8

0.75

1.05

1.05

1.05

1.05

Ω

Ω

Ω

Ω

Switch Leakage Current

0.01

1

µA

Soft-Start Time

0.450

0.650

0.850

ms

RUN Threshold High

●

0.4

1

1.2

V

RUN Leakage Current

●

0.01

1

µA

Output Ripple in Burst Mode Operation

20

ELECTRICAL CHARACTERISTICS

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: The LTC3547E is guaranteed to meet specified performance

from 0°C to 85°C. Specifications over the –40°C and 85°C operating

temperature range are assured by design, characterization and correlation

with statistical process controls.

Note 3: Dynamic supply current is higher due to the internal gate charge

being delivered at the switching frequency.

Note 4: The DFN switch on-resistance is guaranteed by correlation to

wafer level measurements.

Note 5: Guaranteed by long term current density limitations.

Note 6: This IC includes overtemperature protection that is intended

to protect the device during momentary overload conditions. Junction

temperature will exceed 125°C when overtemperature protection is active.

Continuous operation above the specified maximum operating junction

temperature may impair device reliability.

Burst Mode Operation

Efficiency vs Input Voltage

Supply Current vs Temperature

TYPICAL PERFOR A CE CHARACTERISTICS

2.5

µs/DIV

50mV/DIV

50mA/DIV

SW, AC

COUPLED

5V/DIV

3547 G01