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IRFB4510PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFB4510PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFB4510PbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.192mH RG = 25 Ω, IAS = 37A, VGS =10V. Part not recommended for use above this value. ISD ≤ 37A, di/dt ≤ 1550A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400μs; duty cycle ≤ 2%. S D G
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. Rθ is measured at TJ approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 10.7 13.5 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 0.6 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 100 ––– ––– S Qg Total Gate Charge ––– 58 87 nC Qgs Gate-to-Source Charge ––– 14 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 18 Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 40 ––– td(on) Turn-On Delay Time ––– 13 ––– ns tr Rise Time ––– 32 ––– td(off) Turn-Off Delay Time ––– 28 ––– tf Fall Time ––– 28 ––– Ciss Input Capacitance ––– 3180 ––– pF Coss Output Capacitance ––– 220 ––– Crss Reverse Transfer Capacitance ––– 120 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) h ––– 260 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)g ––– 325 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 62 A (Body Diode) ISM Pulsed Source Current ––– ––– 250 A (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 54 81 ns TJ = 25°C VR = 85V, ––– 60 90 TJ = 125°C IF = 37A Qrr Reverse Recovery Charge ––– 95 140 nC TJ = 25°C di/dt = 100A/μs f ––– 130 195 TJ = 125°C IRRM Reverse Recovery Current ––– 3.3 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VDS = 25V, ID = 37A ID = 37A VGS = 20V VGS = -20V MOSFET symbol showing the VDS =50V Conditions VGS = 10V f VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to 80V h, See Fig.1 VGS = 0V, VDS = 0V to 80V gà TJ = 25°C, IS = 37A, VGS = 0V f integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 5mA VGS = 10V, ID = 37A f VDS = VGS, ID = 100μA VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C ID = 37A RG =2.7 Ω VGS = 10V f VDD = 65V ID = 37A, VDS =0V, VGS = 10V f |
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