1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

High Voltage Transistor

Surface Mount

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage (Open Base)

VCEO

300

Vdc

Collector-Base Voltage (Open Emitter)

VCBO

300

Vdc

Emitter-Base Voltage (Open Collector)

VEBO

6.0

Vdc

Collector Current (DC)

IC

500

mAdc

Total Power Dissipation @ TA = 25°C(1)

PD

1.5

Watts

Storage Temperature Range

Tstg

– 65 to +150

°C

Junction Temperature

TJ

150

°C

DEVICE MARKING

P1D

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction-to-Ambient(1)

R

θJA

83.3

°C/W

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage(2)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

300

—

Vdc

Collector-Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

V(BR)CBO

300

—

Vdc

Emitter-Base Breakdown Voltage

(IE = 100 µAdc, IC = 0)

V(BR)EBO

6.0

—

Vdc

Collector-Base Cutoff Current

(VCB = 200 Vdc, IE = 0)

ICBO

—

0.1

µAdc

Emitter-Base Cutoff Current

(VBE = 6.0 Vdc, IC = 0)

IEBO

—

0.1

µAdc

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2.

2. Pulse Test Conditions, tp = 300 µs, δ = 0.02.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by PZTA42T1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

© Motorola, Inc. 1996

PZTA42T1

SOT–223 PACKAGE

NPN SILICON

HIGH VOLTAGE

TRANSISTOR

SURFACE MOUNT

Motorola Preferred Device

CASE 318E-04, STYLE 1

TO-261AA

1

2

3

4

COLLECTOR 2,4

BASE

1

EMITTER 3

REV 2