2N5114 – 2N5116

CORPORATION

SYMBOL

PARAMETER

2N5114

2N5115

2N5116

UNITS

TEST CONDITIONS

MIN

MAX

MIN

MAX

MIN

MAX

Drain Current at Zero Gate Voltage

(Note 1)

-30

-90

-15

-60

-5

-25

mA

Forward Gate-Source Voltage

-1

-1

-1

V

Drain-Source ON Voltage

-1.3

-0.8

-0.6

Static Drain-Source ON Resistance

75

100

150

Ω

Small-Signal Drain-Source ON

Resistance

75

100

150

Common-Source Input Capacitance

(Note 2)

25

25

25

pF

f = 1mHz

Common-Source Reverse Transfer

Capacitance (Note 2)

77

7

f = 1mHz

NOTES 1. Pulse test; duration = 2ms.

2. For design reference only, not 100% tested.

TEST CONDITIONS

2N5114

2N5115

2N5116

-10V

-6V

-6V

20V

12V

8V

430

Ω

910

Ω

2K

Ω

100

Ω

220

Ω

390

Ω

-15mA

-7mA

-3mA

-12V

-7V

-5V

INPUT

OUTPUT

-6V

10%

90%

90%

10%

V

IN

r

t

d

t

r

t

10%

OFF

t

0040

V

DS(ON)

V

DD

51

Ω

1.2K

1.2K

51

Ω

SAMPLING

SCOPE

0.1

µF

0050

V

GG

IN

51

Ω

7.5K

V

SAMPLING SCOPE

RISE TIME 0.4ns

INPUT RESISTANCE 10M

Ω

INPUT CAPACITANCE 1.5pF

R

L

G

R

TYPICAL PERFORMANCE CHARACTERISTICS

0080

4.0

3.0

2.0

1,000

3,000

10,000

30,000

100,000

10.0

9.0

8.0

7.0

6.0

5.0

V

V

(pulsed)

1.0

0.9

0.8

0.7

0.6

0.5

V

g

0070

4.0

3.0

2.0

1

3

10

30

100

10.0

9.0

8.0

7.0

6.0

5.0

V

V

(pulsed)

1.0

0.9

0.8

0.7

0.6

0.5

V

DSS

t

(mA)

0060

4.0

3.0

2.0

10

30

100

300

1,000

1.0

0.9

0.8

0.7

0.6

0.5

10.0

9.0

8.0

7.0

6.0

5.0

DS(ON)

r

(ohms)

V

DS

V

GS

= 0.1V

= 0

V

p

DS(ON)

vs r