IRF6613TRPBF datasheet(3/9 Pages) IRF

No. de pieza	IRF6613TRPBF

Descripción Electrónicos	DirectFETPower MOSFET

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Fabricante Electrónico	IRF [International Rectifier]

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IRF6613PbF

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3

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

≤ 60µs PULSE WIDTH

Tj = 25°C

2.7V

VGS

TOP

10V

7.0V

4.5V

4.0V

3.5V

3.2V

2.9V

BOTTOM

2.7V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

≤ 60µs PULSE WIDTH

Tj = 150°C

2.7V

VGS

TOP

10V

7.0V

4.5V

4.0V

3.5V

3.2V

2.9V

BOTTOM

2.7V

1.5

2.0

2.5

3.0

3.5

VGS, Gate-to-Source Voltage (V)

0.1

1.0

10.0

100.0

1000.0

VDS = 15V

≤ 60µs PULSE WIDTH

TJ = 25°C

TJ = 150°C

-60 -40 -20

0

20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

ID = 23A

VGS = 10V

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

0

20406080

100

QG Total Gate Charge (nC)

0

2

4

6

8

10

12

VDS= 32V

VDS= 20V

ID= 18A

Número de pieza similar - IRF6613TRPBF

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
International Rectifier	IRF6613TRPBF	2Mb / 6P	Benchmark MOSFETs Product Selection Guide

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