SI2333DS-T1 datasheet(2/9 Pages) VISHAY

No. de pieza	SI2333DS-T1

Descripción Electrónicos	P-Channel 12-V (D-S) MOSFET

Download	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VISHAY [Vishay Siliconix]

Página de inicio	http://www.vishay.com

Logo

2 / 9 page

www.vishay.com

2

Document Number: 72023

S09-0130-Rev. C, 02-Feb-09

Vishay Siliconix

Si2333DS

Notes:

a. Pulse test: PW

≤ 300 µs, duty cycle ≤ 2 %.

b. For design aid only, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Limits

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = - 250 µA

- 12

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.40

- 1.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 9.6 V, VGS = 0 V

- 1

µA

VDS = - 9.6 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS ≤ - 5 V, VGS = - 4.5 V

- 20

A

Drain-Source On-Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 5.3 A

0.025

0.032

Ω

VGS = - 2.5 V, ID = - 4.6 A

0.033

0.042

VGS = - 1.8 V, ID = - 2.0 A

0.046

0.059

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 5.3 A

17

S

Diode Forward Voltage

VSD

IS = - 1.0 A, VGS = 0 V

- 0.7

- 1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = - 6 V, VGS = - 4.5 V

ID ≅ - 5.3 A

11.5

18

nC

Gate-Source Charge

Qgs

1.5

Gate-Drain Charge

Qgd

3.2

Input Capacitance

Ciss

VDS = - 6 V, VGS = 0 V, f = 1 MHz

1100

pF

Output Capacitance

Coss

390

Reverse Transfer Capacitance

Crss

300

Switchingc

Turn-On Time

td(on)

VDD = - 6 V, RL = 6 Ω

ID ≅ - 1.0 A, VGEN = - 4.5 V

RG = 6 Ω

25

40

ns

tr

45

70

Turn-Off Time

td(off)

72

110

tf

60

90

Número de pieza similar - SI2333DS-T1

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI2333DS-T1-E3	195Kb / 9P	Halogen-free According to IEC 61249-2-21 Rev. C, 02-Feb-09
VBsemi Electronics Co.,...	SI2333DS-T1-GE3	1Mb / 9P	P-Channel 20-V (D-S) MOSFET

More results

Descripción similar - SI2333DS-T1

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI2335DS	48Kb / 4P	P-Channel 12-V (D-S) MOSFET Rev. A, 23-Oct-00
	SI6423DQ	42Kb / 5P	P-Channel 12-V (D-S) MOSFET Rev. A, 07-Jul-03
	SIA477EDJT	264Kb / 8P	P-Channel 12 V (D-S) MOSFET Rev. A, 29-Aug-16
	SI2333CDS-T1-GE3	225Kb / 9P	P-Channel 12-V (D-S) MOSFET Rev. C, 16-Nov-0
	SI3477DV	226Kb / 11P	P-Channel 12 V (D-S) MOSFET Rev. A, 19-Jul-10
	SI2333DS	243Kb / 3P	P-Channel 12-V (D-S) MOSFET Rev. B, 21-Mar-05
	SI2333CDS	104Kb / 6P	P-Channel 12-V (D-S) MOSFET Rev. A, 23-Jun-08
	SI5475DC	109Kb / 4P	P-Channel 12-V (D-S) MOSFET Rev. B, 05-Aug-02
VBsemi Electronics Co.,...	MMSF4P01HDR2G	878Kb / 6P	P-Channel 12-V (D-S) MOSFET
Vishay Siliconix	SI2333DS	199Kb / 9P	P-Channel 12-V (D-S) MOSFET Rev. C, 02-Feb-09

More results

SI2333DS-T1 Datasheet(PDF) 2 Page - Vishay Siliconix

SI2333DS-T1 Datasheet(HTML) 2 Page - Vishay Siliconix

Número de pieza similar - SI2333DS-T1

Descripción similar - SI2333DS-T1

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Descarga

Enlace URL