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STP18N65M5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP18N65M5 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 19 page STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Electrical characteristics Doc ID 022879 Rev 3 5/19 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(V) tr(V) tf(i) tc(off) Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 9.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21 and Figure 24) - 36 7 9 11 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 15 60 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 15 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15 A, di/dt = 100 A/µs VDD = 100 V (see Figure 24) - 290 3.4 23.5 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 24) - 352 4 24 ns µC A |
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