Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
E-L6205PD Datasheet(PDF) 9 Page - STMicroelectronics |
|
E-L6205PD Datasheet(HTML) 9 Page - STMicroelectronics |
9 / 21 page 9/21 L6205 NON-DISSIPATIVE OVERCURRENT PROTECTION The L6205 integrates an Overcurrent Detection Circuit (OCD). This circuit provides protection against a short circuit to ground or between two phases of the bridge. With this internal over current detection, the external cur- rent sense resistor normally used and its associated power dissipation are eliminated. Figure 7 shows a simpli- fied schematic of the overcurrent detection circuit. To implement the over current detection, a sensing element that delivers a small but precise fraction of the out- put current is implemented with each high side power MOS. Since this current is a small fraction of the output current there is very little additional power dissipation. This current is compared with an internal reference cur- rent IREF. When the output current in one bridge reaches the detection threshold (typically 5.6A) the relative OCD comparator signals a fault condition. When a fault condition is detected, the EN pin is pulled below the turn off threshold (1.3V typical) by an internal open drain MOS with a pull down capability of 4mA. By using an ex- ternal R-C on the EN pin, the off time before recovering normal operation can be easily programmed by means of the accurate thresholds of the logic inputs. Figure 7. Overcurrent Protection Simplified Schematic Figure 8 shows the Overcurrent Detection operation. The Disable Time tDISABLE before recovering normal opera- tion can be easily programmed by means of the accurate thresholds of the logic inputs. It is affected whether by CEN and REN values and its magnitude is reported in Figure 9. The Delay Time tDELAY before turning off the bridge when an overcurrent has been detected depends only by CEN value. Its magnitude is reported in Figure 10. CEN is also used for providing immunity to pin EN against fast transient noises. Therefore the value of CEN should be chosen as big as possible according to the maximum tolerable Delay Time and the REN value should be chosen according to the desired Disable Time. The resistor REN should be chosen in the range from 2.2KΩ to 180KΩ. Recommended values for REN and CEN are respectively 100K Ω and 5.6nF that allow obtaining 200µs Disable Time. + OVER TEMPERATURE IREF (I1A+I2A) / n I1A / n POWER SENSE 1 cell POWER SENSE 1 cell POWER DMOS n cells POWER DMOS n cells HIGH SIDE DMOSs OF THE BRIDGE A OUT1A OUT2A VSA I1A I2A I2A / n OCD COMPARATOR TO GATE LOGIC INTERNAL OPEN-DRAIN RDS(ON) 40 Ω TYP. CEN REN ENA +5V µC or LOGIC D02IN1353 |
Número de pieza similar - E-L6205PD |
|
Descripción similar - E-L6205PD |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |