2N5064 datasheet(1/4 Pages) DIGITRON

No. de pieza	2N5064

Descripción Electrónicos	SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

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Fabricante Electrónico	DIGITRON [Digitron Semiconductors]

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DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

2N5060-2N5064

SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage (1)

(TJ = -40 to +110°C, sine wave, 50 to 60 Hz, gate open)

2N5060

2N5061

2N5062

2N5064

VDRM

VRRM

30

60

100

200

V

On-state current RMS (180° conduction angles, TC = 80°C)

IT(RMS)

0.8

A

Average on-state current

(180° conduction angles)

(TC = 67°C)

(TC = 102°C)

IT(AV)

0.51

0.255

A

Peak non-repetitive surge current

(TA = 25°C)

(1/2 cycle, sine wave, 60Hz)

ITSM

10

A

Circuit fusing considerations

(t = 8.3 ms)

I2t

0.4

A2s

Average on-state current

(180° conduction angles)

(TC = 67°C)

(TC = 102°C)

IT(AV)

0.51

0.255

A

Forward peak gate power

(Pulse width ≤ 1.0µsec; TA = 25°C)

PGM

0.1

W

Forward average gate power

(TA = 25°C, t = 8.3ms)

PG(AV)

0.01

W

Forward peak gate current

(Pulse width ≤ 1.0µsec; TA = 25°C)

IGM

1.0

A

Reverse peak gate voltage

(Pulse width ≤ 1.0µsec; TA = 25°C)

VRGM

5.0

V

Operating junction temperature range

TJ

-40 to +110

°C

Storage temperature range

Tstg

-40 to +150

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not

valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1.

VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with

negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal resistance, junction to case

R

θJC

75

°C/W

Thermal resistance, junction to ambient

R

θJA

200

°C/W

Lead solder temperature

(lead length ≥ 1/16” from case, 10 s max.)

-

230

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak repetitive forward or reverse blocking current (2)

(VAK = Rated VDRM or VRRM)

TC = 25°C

TC = 110°C

IDRM, IRRM

-

10

50

µA

ON CHARACTERISTICS

Peak forward on-state voltage (3)

(ITM = 1.2 A peak @ TA = 25°C)

VTM

-

1.7

V

Gate trigger current (continuous DC) (4)

(VAK = 7.0 Vdc, RL = 100 Ω)

TC = 25°C

TC = -40°C

IGT

-

200

350

µA

Gate trigger voltage (continuous DC) (4)

(VAK = 7.0 Vdc, RL = 100 Ω)

TC = 25°C

TC = -40°C

VGT

-

0.8

1.2

V

Gate non-trigger voltage

(VAK = rated VDRM, RL = 100 Ω) TC = 110°C

VGD

0.1

-

V

sales@digitroncorp.com

fax +1.908.245-0555

www.digitroncorp.com

Rev. 20130116

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