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2SK2611 Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd

No. de pieza 2SK2611
Descripción Electrónicos  N-Channel Power MOSFET
Download  6 Pages
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Fabricante Electrónico  NELLSEMI [Nell Semiconductor Co., Ltd]
Página de inicio  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

2SK2611 Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
2SK2611 Series
www.nellsemi.com
Page 1 of 6
N-Channel Power MOSFET
(9A, 900Volts)
PRODUCT SUMMARY
I (A)
D
9
V
(V)
DSS
900
1.10 @ V
= 10V
GS
58
R
(Ω)
DS(ON)
Q (nC) max.
G
UNIT
V /ns
V
W /°C
A
mJ
ºC
-55 to 150
VALUE
9
5.6
900
±30
27
900
150
3.5
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
T =25°C to 150°C
J
TEST CONDITIONS
R
=20KΩ
GS
T =25°C
C
T =100°C
C
Operation junction temperature
Storage temperature
Peak diode recovery dv/dt(Note 3)
PARAMETER
Pulsed Drain current(Note 1)
Continuous Drain Current (V
= 10V)
GS
Total power dissipation
Gate to Source voltage
Drain to Gate voltage
Drain to Source voltage
SYMBOL
VDGR
VDSS
dv/dt
VGS
IDM
TSTG
PD
ID
TJ
TL
.
.
lbf in (N m)
300
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
-55 to 150
Note:
1.Repetitive rating: pulse width limited by junction temperature.
10 (1.1)
1.6mm from case
IAR
Avalanche current(Note 1)
9
T =25°C
C
2
. l
=9A, L=15.0mH, V
= 90V, R =25Ω, starting T =25°C.
AS
DD
G
J
663
Single pulse avalanche energy(Note 2)
EAS
3
.I
≤ 9A, di/dt ≤ 130A/µs, V
V
, starting T
.
SD
DD
(BR)DSS
J =25°C
1.2
Derating factor above 25
°C
mJ
15
Repetitive avalanche energy(Note 1)
EAR
l
=9A, R
=10V
AR
GS
=50Ω, V
GS
l
=9A, =15.0mH
AS
L
W
TO-3PB
G
D
S
D
D (Drain)
G
(Gate)
S (Source)
DESCRIPTION
Low reverse transfer capacitance
(C
= 45pF typical)
RSS
R
= 1.10Ω @ V
= 10V
DS(ON)
GS
Ultra low gate charge(58nC typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
FEATURES
They are designed for use in applications such as switched
mode power supplies, DC to DC converters, motor control
circuits, UPS, relay drive and general purpose switching
applications.
The Nell 2SK2611 is a three-terminal silicon device with
current conduction capability of 9A, fast switching speed,
low on-state resistance, breakdown voltage rating of 900V,
and max. threshold voltage of 4 volts.
TO-3PB


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