IRF13N50 datasheet(4/7 Pages) NELLSEMI

No. de pieza	IRF13N50

Descripción Electrónicos	N-Channel Power MOSFET

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Fabricante Electrónico	NELLSEMI [Nell Semiconductor Co., Ltd]

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SEMICONDUCTOR

Nell High Power Products

RoHS

Fig.5 Typical capacitance vs. Drain-to-Source

voltage

Drain-to-Source voltage , VDS (V)

Source-to-drain voltage, VSD (V)

Fig.8 Maximum safe operating area

Drain-to-Source voltage, VDS (V)

Case temperature, T (°C)

C

Fig.7 Typical gate charge vs. gate-to-source

voltage

Total gate charge , QG (nC)

Fig.6 Typical source-drain diode forward

voltage

Fig.9 Maximum drain current vs.

Case temperature

5

12

1000

100

10

0

12

24

36

48

7

2

0

10

1

100

1000

15

12

9

6

3

0

25

50

75

100

125

150

0.5

0.2

1.1

1.4

0.8

60

10

0.1

1

10

10²

10³

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10000

100000

IRF13N50 Series

C

=

(

)

iss

C

+C

C

= shorted

gs

gd

ds

C

= C

rss

gd

C

= C

+C

oss

ds

gd

V

= 0V,

GS

f =1MHZ

1000

100

Crss

Coss

Ciss

100

10

1

0.1

T = 25°C

J

T = 150°C

J

V

= 0V

GS

V

= 400V

DS

V

= 250V

DS

V

= 100V

DS

l = 14A

D

Operation in This Area is Limited by RDS(ON)

1mssx

100µs

10msec

Note:

1. T

2. T

= 25°C

C

= 150°C

J

3. Single Pulse

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IRF13N50 Datasheet(PDF) 4 Page - Nell Semiconductor Co., Ltd

IRF13N50 Datasheet(HTML) 4 Page - Nell Semiconductor Co., Ltd

Número de pieza similar - IRF13N50

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