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UF5210G-TA3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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UF5210G-TA3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page UF5210 POWER MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-845.B ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250µA -100 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=-1mA -0.11 V/°C Drain-Source Leakage Current IDSS VDS=-100V, VGS=0V -25 µA VDS=-80V, VGS=0V, TJ=150°C -250 µA Gate-Source Leakage Current Forward IGSS VGS=20V, VDS=0V 100 nA Reverse VGS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Static Drain-to-Source On-Resistance RDS(ON) VGS=-10V, ID=-24A (Note 2) 0.06 Ω Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA -2.0 -4.0 V DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-25V, f=1.0MHz 2700 pF Output Capacitance COSS 790 pF Reverse Transfer Capacitance CRSS 450 pF SWITCHING PARAMETERS Total Gate Charge QG ID=-21A, VDS=-80V, VGS=-10V (Note 2) 180 nC Gate-to-Source Charge QGS 25 nC Gate-to-Drain ("Miller") Charge QGD 97 nC Turn-ON Delay Time tD(ON) VDD=-50V, ID=-21A, RG=2.5Ω RD=2.4Ω, (Note 2) 17 ns Rise Time tR 86 ns Turn-OFF Delay Time tD(OFF) 79 ns Fall Time tF 81 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body Diode Continuous Source Current IS -40 A Maximum Body-Diode Pulsed Current (Note 1) ISM -140 A Drain-Source Diode Forward Voltage VSD TJ=25°C, IS=-21A, VGS=0V (Note 2) -1.6 V Body Diode Reverse Recovery Time tRR TJ=25°C, IF=-21A, di/dt=-100A/µs (Note 2) 170 260 ns Body Diode Reverse Recovery Charge QRR 1.2 1.8 µC Forward Turn-On Time tON Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Note: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. Pulse width≤300µs; duty cycle≤2%. |
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