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LDA111STR Datasheet(PDF) 2 Page - Clare, Inc.

No. de pieza LDA111STR
Descripción Electrónicos  Solid State Current Sensors
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Fabricante Electrónico  CLARE [Clare, Inc.]
Página de inicio  http://www.clare.com
Logo CLARE - Clare, Inc.

LDA111STR Datasheet(HTML) 2 Page - Clare, Inc.

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LDA111
Rev. 3
Absolute Maximum Ratings are stress ratings. Functional
operation of the device at these or any other conditions
beyond those indicated in the operational sections of this
data sheet is not implied. Exposure of the device to the
absolute maximum ratings for an extended period may
degrade the device and effect its reliability.
Absolute Maximum Ratings (@ 25o C)
2
Electrical Characteristics
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Output Characteristics @ 25°C
Phototransistor Blocking Voltage
I
C=10µA
BV
CEO
20
50
-
V
Phototransistor Output Current
V
CE=5V, IF=0mA
I
CEO
-
50
500
nA
Saturation Voltage
I
C=2mA, IF=16mA
V
SAT
--
-
V
I
C=.15mA, IF=.05mA
-
0.5
0.5
V
Current Transfer Ratio
I
F=6mA, VCE=0.5V
CTR
300
1000
-
%
Output Capacitance
50V, f=1 MHz
C
OUT
-3
-
pF
Capacitance
Input to Output
-
-
-
-
-
-pF
Input Characteristics @ 25°C
Input Control Current
I
C=2mA, VCE=0.5V
I
F
2
1
100
mA
Input Voltage Drop
I
F=5mA
V
F
0.9
1.2
1.4
V
Input Reverse Voltage
-
V
R
--
5
V
(LDA101, LDA111)
Input Reverse Current
V
R=5V
I
R
--
10
nA
(LDA101, LDA111)
Common Characteristics @ 25°C
Input to Output Isolation
-
V
I/O
3750
-
-
V
RMS
Parameter
Min
Typ
Max Units
Input Power Dissipation
-
-
1501
mW
Input Control Current
-
-
100
mA
Peak (10ms)
-
-
1
A
Reverse Input Voltage
-
-
5
V
Phototransistor
-
-
1502
mW
Power Dissipation
Total Package Dissipation
-
-
8003
mW
Isolation Voltage
Input to Output
3750
-
-
V
RMS
Operational Temperature
-40
-
+85
°C
Storage Temperature
-40
-
+125
°C
Soldering Temperature
DIP Package
-
-
+260
°C
Surface Mount Package
-
-
+220
°C
(10 Seconds Max.)
1 Derate Linearly 1.33 mw/oC
2 Derate Linearly 2.0 mw/oC
3 Derate Linearly 6.67 mw/oC


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