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FQPF47P06YDTU Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQPF47P06YDTU Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 9 page  Elerical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.06mH, IAS = -30A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -47A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -60 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.06 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -60 V, VGS = 0 V -- -- -1 µA VDS = -48 V, TC = 150°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -15 A -- 0.021 0.026 Ω gFS Forward Transconductance VDS = -30 V, ID = -15 A -- 19 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 2800 3600 pF Coss Output Capacitance -- 1300 1700 pF Crss Reverse Transfer Capacitance -- 320 420 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -30 V, ID = -23.5 A, RG = 25 Ω -- 50 110 ns tr Turn-On Rise Time -- 450 910 ns td(off) Turn-Off Delay Time -- 100 210 ns tf Turn-Off Fall Time -- 195 400 ns Qg Total Gate Charge VDS = -48 V, ID = -47 A, VGS = -10 V -- 84 110 nC Qgs Gate-Source Charge -- 18 -- nC Qgd Gate-Drain Charge -- 44 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -30 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -120 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -30 A -- -- -4.0 V trr Reverse Recovery Time VGS = 0 V, IS = -47 A, dIF / dt = 100 A/µs -- 130 -- ns Qrr Reverse Recovery Charge -- 0.55 -- µC (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2001 Fairchild Semiconductor Corporation FQPF47P06 / FQPF47P06YDTU Rev. C0 www.fairchildsemi.com |
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