Nombre de pieza
         Descripción
2SC1927

 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE ( 4 Page)


NEC
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2SC1927
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
BASE AND COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
IC = 10·IB
2
1
0.2
0.1
0.02
0.05
0.5
0.1 0.2
1
0.5
2
5
10 20
50
VBE(sat)
VCE(sat)
IC - Collector Current - mA
200
100
50
70
5
7
10
20
30
0.2
0.5
1
50
30
10 20
7
2
5
0.1
0.7
3
VCE = 10 V
IC - Collector Current - mA
0
0.5 1
2 3
30
20
10
7
5
VCB - Collector to Base Voltage - V
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
3
2
1
0.3
0.5
0.7
IE = 0
f = 1.0 MHz
0.6
0.7
0.8
0.9
50
20
10
5
2
1
0.5
VCE = 10 V
VBE - Base to Emitter Voltage - V
DC CURRENT GAIN vs. COLLECTOR
CURRENT
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0.2
0.5
1
50
30
10 20
7
2
5
0.1
0.7
3
IC - Collector Current - mA
3000
2000
700
1000
50
70
100
500
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
300
200
VCE = 2.0 V
VCE = 5.0 V
0.3
0.3
1  2  3  4 



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