Nombre de pieza
         Descripción
2SC3583

 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR ( 8 Page)


NEC
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2
2SC3583
TYPICAL CHARACTERISTICS (TA = 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1
5
10
50
0.5
100
150
TA-Ambient Temperature-
°C
IC-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 8 V
0
5
10
15
0.5
1
5
10
50 70
IC-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 8 V
f = 1.0 GHz
0.1
0.5
0.3
0.2
0.7
1
3
2
13
25
7
10
20
30
VCB-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1.0 MHz
0
12
8
4
16
20
0.1
0.3
0.2
0.5 0.7.
1.0
2.0
3.0
f-Frequency-GHz
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
VCE = 8 V
IC = 20 mA
1
5
3
2
7
10
30
20
13
25
7
10
20
30
IC-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
VCE = 8 V
Free air
|S21e|2
MAG
1  2  3  4  5  6  7  8 



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