2SC3604 datasheet(4/8 Pages) NEC

No. de pieza	2SC3604

Descripción Electrónicos	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

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Fabricante Electrónico	NEC [NEC]

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4 / 8 page

4

2SC3604

S PARAMETER

90

100

110

120

130

0.18

0.32

0.17

0.33

0.16

0.34

0.15

0.35

0.14

0.36

0.13

0.37

0.12

0.35

0.11

0.39

0.10

0.40

0.09

0.41

0.08

0.42

0.07

0.43

50

60

70

80

0.1

50

20

10

5.0

4.0

3.0

0.2

0.4

0.6

0.8

1.0

0.2

0.4

0.6

0.8

RESTSTANCE COMPONENT

R

ZO

0.2

0.3

0.4

M

PO

N

EN

T

4 GHz

0.5 GHz

S11e

S22e

S11e, S22e

− FREQUENCY

VCE = 8 V

IC = 20 mA

500 MHz Step

S21e

− FREQUENCY

0.5 GHz

90

°

120

°

150

°

60

°

30

°

0

°

10

4 GHz

0.5 GHz

180

°

−150°

−120°

−90°

−60°

−30°

VCC = 8 V

IC = 20 mA

500 MHz Step

S12e

− FREQUENCY

90

°

120

°

150

°

60

°

30

°

0

°

4 GHz

180

°

−150°

−120°

−90°

−60°

−30°

VCE = 8 V

IC = 20 mA

500 MHz Step

5

0.1

0.05

Número de pieza similar - 2SC3604

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
New Jersey Semi-Conduct...	2SC3604	198Kb / 2P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC3604	218Kb / 10P	SILICON TRANSISTOR 1996

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Descripción similar - 2SC3604

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
California Eastern Labs	NE68719	189Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC	2SC3587	91Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
New Jersey Semi-Conduct...	2SC3604	198Kb / 2P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
NEC	2SC3603	89Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
eleflow technologies co...	2SC3603	222Kb / 4P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
NEC	2SC5369	72Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION
California Eastern Labs	2SC3356	1Mb / 9P	NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
NEC	2SC5177	56Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5180	54Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5185	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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2SC3604 Datasheet(PDF) 4 Page - NEC

2SC3604 Datasheet(HTML) 4 Page - NEC

Número de pieza similar - 2SC3604

Descripción similar - 2SC3604

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