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| 2SC4226 |
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NEC |
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2 page
2 2SC4226 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3V Collector Current IC 100 mA Total Power Dissipation PT 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg –65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector Cutoff Current ICBO 1.0 µAVCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 µAVEB = 1 V, IC = 0 DC Current Gain hFE 40 110 250 VCE = 3 V, IC = 7 mA*1 Gain Bandwidth Product fT 3.0 4.5 GHz VCE = 3 V, IC = 7 mA Feed back Capacitance Cre 0.7 1.5 pF VCE = 3 V, IE = 0, f = 1 MHz*2 Insertion Power Gain |S21e|2 79 dB VCE = 3 V, IC = 7 mA, f = 1 GHz Noise Figure NF 1.2 2.5 dB VCE = 3 V, IC = 7 mA, f = 1 GHz *1 Pulse Measurement ; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank R23 R24 R25 Marking R23 R24 R25 hFE 40 to 80 70 to 140 125 to 250 |
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