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MMBTH24-7 Datasheet(PDF) 1 Page - Diodes Incorporated |
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MMBTH24-7 Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 2 page DS31034 Rev. 6 - 2 1 of 2 MMBTH24 www.diodes.com MMBTH24 NPN SURFACE MOUNT VHF/UHF TRANSISTOR · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators · High Current Gain Bandwidth Product · Ideal for Mixer and RF Amplifier Applications with collector currents in the 100 mA - 30 mA Range Characteristic Symbol MMBTH24 Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 4.0 V Collector Current - Continuous (Note 1) IC 50 mA Power Dissipation (Note 1) Pd 300 mW Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W Operating and Storage and Temperature Range Tj,TSTG -55 to +150 °C Features Maximum Ratings @ TA = 25 °C unless otherwise specified A E J L TOP VIEW M B C H G D K C B E Mechanical Data · Case: SOT-23, Molded Plastic · Case material - UL Flammability Rating 94V-0 · Moisture sensitivity: Level 1 per J-STD-020A · Terminals: Solderable per MIL-STD-202, Method 208 · Terminal Connections: See Diagram · Marking (See Page 2): K3Z · Ordering & Date Code Information: See Page 2 · Weight: 0.008 grams (approx.) Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1mA, IB = 0 Collector-Base Breakdown Voltage V(BR)CBO 40 ¾ V IC = 100 mA, IE = 0 Emitter-Base Breakdown Voltage V(BR)EBO 4.0 ¾ V IE = 10 mA, IC = 0 Collector Cutoff Current ICBO ¾ 100 nA VCB = 30V, IE = 0 Emitter Cutoff Current IEBO ¾ 100 nA VEB = 2V, IC = 0 ON CHARACTERISTICS (Note 2) DC Current Gain hFE 30 ¾¾ IC = 8mA, VCE = 10.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.5 V IC = 4mA, IB = 400 mA Base- Emitter On Voltage VBE(SAT) ¾ 0.95 V IC = 4mA, VCE = 10.0V SMALL SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product fT 400 ¾ MHz VCE = 10V, f = 100MHz, IC = 8mA Collector-Base Capacitance CCB ¾ 0.7 pF VCB = 10V, f = 1.0MHz, IE = 0 Collector-Base Feedback Capacitiance CRB ¾ 0.65 pF VCB = 10V, f = 1.0MHz, IE = 0 Collector-Base Time Constant Rb’Cc ¾ 9ps IC = 4mA VCB = 10V, f =31.8MHz SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0 ° 8 ° All Dimensions in mm E B C |
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