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MMBTH24-7 Datasheet(PDF) 1 Page - Diodes Incorporated

No. de pieza MMBTH24-7
Descripción Electrónicos  NPN SURFACE MOUNT VHF/UHF TRANSISTOR
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMBTH24-7 Datasheet(HTML) 1 Page - Diodes Incorporated

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DS31034 Rev. 6 - 2
1 of 2
MMBTH24
www.diodes.com
MMBTH24
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
·
Designed for VHF/UHF Amplifier Applications
and High Output VHF Oscillators
·
High Current Gain Bandwidth Product
·
Ideal for Mixer and RF Amplifier Applications
with collector currents in the 100
mA - 30 mA
Range
Characteristic
Symbol
MMBTH24
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
4.0
V
Collector Current - Continuous (Note 1)
IC
50
mA
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
417
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
TOP VIEW
M
B C
H
G
D
K
C
B
E
Mechanical Data
·
Case: SOT-23, Molded Plastic
·
Case material - UL Flammability Rating 94V-0
·
Moisture sensitivity: Level 1 per J-STD-020A
·
Terminals: Solderable per MIL-STD-202,
Method 208
·
Terminal Connections: See Diagram
·
Marking (See Page 2): K3Z
·
Ordering & Date Code Information: See Page 2
·
Weight: 0.008 grams (approx.)
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 1mA, IB = 0
Collector-Base Breakdown Voltage
V(BR)CBO
40
¾
V
IC = 100
mA, IE = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
4.0
¾
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
¾
100
nA
VCB = 30V, IE = 0
Emitter Cutoff Current
IEBO
¾
100
nA
VEB = 2V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
30
¾¾
IC = 8mA, VCE = 10.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.5
V
IC = 4mA, IB = 400
mA
Base- Emitter On Voltage
VBE(SAT)
¾
0.95
V
IC = 4mA, VCE = 10.0V
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
400
¾
MHz
VCE = 10V, f = 100MHz, IC = 8mA
Collector-Base Capacitance
CCB
¾
0.7
pF
VCB = 10V, f = 1.0MHz, IE = 0
Collector-Base Feedback Capacitiance
CRB
¾
0.65
pF
VCB = 10V, f = 1.0MHz, IE = 0
Collector-Base Time Constant
Rb’Cc
¾
9ps
IC = 4mA VCB = 10V, f =31.8MHz
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
E
B
C


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