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2SD1427 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD1427 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1427 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 µA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition freuqency IC=0.1A ; VCE=10V;f=1MHz 3 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 165 pF VF Diode forward voltage IF=5A 2.0 V tf Fall time IC=4A;IB1=0.8A 1.0 µs |
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