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| 2SC5191 |
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 NEC
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2 page 
2 2SC5191 ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector Cutoff Current ICBO VCB = 5 V, IE = 0 100 nA Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 100 nA DC Current Gain hFE VCE = 1 V, IC = 3 mA Note 1 80 160 Insertion Power Gain (1) S21e2 VCE = 1 V, IC = 3 mA, f = 2.0 GHz 2.5 3.5 dB Insertion Power Gain (2) S21e2 VCE = 3 V, IC = 20 mA, f = 2.0 GHz 6.5 dB Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2.0 GHz 1.7 2.5 dB Noise Figure (2) NF VCE = 3 V, IC = 7 mA, f = 2.0 GHz 1.5 dB Gain Bandwidth Product (1) fT VCE = 1 V, IC = 3 mA, f = 2.0 GHz 4 4.5 GHz Gain Bandwidth Product (2) fT VCE = 3 V, IC = 20 mA, f = 2.0 GHz 8.5 GHz Collector Capacitance Cre VCB = 1 V, IE = 0, f = 1.0 MHz Note 2 0.75 0.85 pF Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty cycle ≤ 2 %, Pulsed 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE Classification Rank FB Marking T88 hFE 80 to 160 |
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