Nombre de pieza
         Descripción
2SC5336

 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER ( 6 Page)


NEC
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2SC5336
TYPICAL CHARACTERISTICS (TA = 25 °
°°°C)
0
50
100
150
1.0
0.3
13
5
10
20
30
0.5
1.0
2.0
3.0
5.0
0
1
3
5
10
20 30
50
100
5
10
15
10
0.5
1
5
10
20
50
100
200
50
0.3
1
0.5
1
2
3
5
10
3
5
10
20
30 50
0
0.2
10
20
0.4
0.6 0.8 1.0 1.4
2.0
TA - Ambient Temperature - ˚C
FEED BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
VCB - Collector to Base Voltage - V
INSERTION GAIN vs.
COLLECTOR CURRENT
IC - Collector Current - mA
IC - Collector Current - mA
IC - Collector Current - mA
f - Frequency - GHZ
S21e 2
MAG
VCE = 10 V
IC = 20 mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BAND WIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION GAIN .MAXIMUM GAIN vs.
FREQUENCY
VCE = 10 V
f = 1 GHZ
VCE = 10 V
f = 1 GHZ
f = 1.0 MHZ
VCE = 10 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
Rth(j–a) 312.5 ˚C/W
Ceramic Substrate
16 cm2
× 0.7 mm
2.0
1  2  3  4  5  6 



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