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FDD18N20LZ Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDD18N20LZ Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©201 1 Fairchild Semiconductor Corporation FDD18N20LZ Rev. C1 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted. Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: L = 2.5 mH, IAS = 16 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3: ISD ≤ 16 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4: Essentially independent of operating temperature typical characteristics. Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity DPAK Tape and Reel 330 mm 16 mm 2500 units FDD18N20LZ FDD18N20LZ Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V, TJ = 25oC 200 - - V BVDSS / ∆ TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25oC - 0.2 - C V/o IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V - - 1 A VDS = 160 V, TC = 125oC - - 10 IGSS Gate to Body Leakage Current VGS = ±16 V, VDS = 0 V - - ±10 A VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 µΑ 1.0 - 2.5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 8A - 0.10 0.125 VGS = 5 V, ID = 8 A - 0.11 0.13 gFS Forward Transconductance VDS = 20 V, ID = 2 A -11 - S Ciss Input Capacitance VDS = 25 V, VGS = 0 V f = 1 MHz - 1185 1575 pF Coss Output Capacitance - 190 255 pF Crss Reverse Transfer Capacitance - 25 40 pF Qg(tot) Total Gate Charge at 10V VDS = 200 V ID = 16 A VGS = 10 V (Note 4) -30 40 nC Qgs Gate to Source Gate Charge - 3.5 - nC Qgd Gate to Drain “Miller” Charge - 8.5 - nC td(on) Turn-On Delay Time VDD = 100 V, ID = 16 A VGS = 10 V, RG = 25 Ω (Note 4) -15 40 ns tr Turn-On Rise Time - 20 50 ns td(off) Turn-Off Delay Time - 135 280 ns tf Turn-Off Fall Time - 50 110 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 16 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 64 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 4 A - - 1.4 V trr Reverse Recovery Time VGS = 0 V, ISD = 4 A dIF/dt = 100 A/µs - 105 - ns Qrr Reverse Recovery Charge - 0.4 - C |
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