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FDD18N20LZ Datasheet(PDF) 2 Page - Fairchild Semiconductor

No. de pieza FDD18N20LZ
Descripción Electrónicos  N-Channel UniFETTM MOSFET 200 V, 16 A, 125 m廓
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD18N20LZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

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©201
1 Fairchild Semiconductor Corporation
FDD18N20LZ Rev. C1
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C = 25
oC unless otherwise noted.
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L =
2.5 mH, IAS = 16 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD ≤ 16 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
DPAK
Tape and Reel
330 mm
16 mm
2500 units
FDD18N20LZ
FDD18N20LZ
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V, TJ = 25oC
200
-
-
V
BVDSS
/ ∆
TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25oC
-
0.2
-
C
V/o
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
-
-
1
A
VDS = 160 V, TC = 125oC
-
-
10
IGSS
Gate to Body Leakage Current
VGS = ±16 V, VDS = 0 V
-
-
±10
A
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250 µΑ
1.0
-
2.5
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 8A
-
0.10
0.125
VGS = 5 V, ID = 8 A
-
0.11
0.13
gFS
Forward Transconductance
VDS = 20 V, ID = 2 A
-11
-
S
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V
f = 1 MHz
-
1185
1575
pF
Coss
Output Capacitance
-
190
255
pF
Crss
Reverse Transfer Capacitance
-
25
40
pF
Qg(tot)
Total Gate Charge at 10V
VDS = 200 V ID = 16 A
VGS = 10 V
(Note 4)
-30
40
nC
Qgs
Gate to Source Gate Charge
-
3.5
-
nC
Qgd
Gate to Drain “Miller” Charge
-
8.5
-
nC
td(on)
Turn-On Delay Time
VDD = 100 V, ID = 16 A
VGS = 10 V, RG = 25 Ω
(Note 4)
-15
40
ns
tr
Turn-On Rise Time
-
20
50
ns
td(off)
Turn-Off Delay Time
-
135
280
ns
tf
Turn-Off Fall Time
-
50
110
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
16
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
64
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 4 A
-
-
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, ISD = 4 A
dIF/dt = 100 A/µs
-
105
-
ns
Qrr
Reverse Recovery Charge
-
0.4
-
C


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