6

f

o

1

e

g

a

P

0

0

.

1

.

v

e

R

0

0

1

0

J

E

3

0

0

0

S

D

9

0

R

Jul 14, 2010

Preliminary

Data Sheet

NE202930

Silicon NPN Epitaxial High Frequency Transistor

FEATURES

•

•

Ideal for low noise and low distortion amplification

•

Suitable for equipments of low collector voltage (Less than 5 V)

•

Suitable for up to 1 GHz applications

APPLICATIONS

•

LNA (Low Noise Amplifier) or power splitter for digital-TV

OUTLINE

RENESAS Package code: 30

(Package name: 3-pin super minimold (30 PKG))

Note: Marking is "R7D"

1. Emitter

2. Base

3. Collector

ORDERING INFORMATION

Part Number

Order Number

Package

Marking

Supplying Form

NE202930-T1

NE202930-T1-A

3-pin super

minimold (30 PKG)

(Pb-Free)

R7D

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE202930-A

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

9

V

Collector to Emitter Voltage

(Base Short)

9

V

Collector to Emitter Voltage

(Base Open)

6

V

Emitter to Base Voltage

2

V

Collector Current

100

mA

Total Power Dissipation

Note

150

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note: Free air

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0003EJ0100

Rev.1.00

Jul 14, 2010

A Business Partner of Renesas Electronics Corporation.