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MOS INTEGRATED CIRCUIT

MC-4R256FKE8D

Direct Rambus DRAM RIMM

256M-BYTE (128M-WORD x 18-BIT)

DATA SHEET

Document No. E0079N20 (Ver 2.0)

Date Published May 2002 (K) Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2001-2002

NEC Corporation. 2000

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for

use in a broad range of applications including computer memory, personal computers, workstations, and other

applications where high bandwidth and low latency are required.

MC-4R256FKE8D modules consists of eight 288M Direct Rambus DRAM (Direct RDRAM) devices (

µPD488588).

These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling

Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and

board design technologies.

Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,

randomly addressed memory transactions. The separate control and data buses with independent row and column

control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions

per device.

Features

• 184 edge connector pads with 1mm pad spacing

• 256 MB Direct RDRAM storage

• Gold plated contacts

• RDRAMs use Chip Scale Package (CSP)

• Serial Presence Detect support

• Operates from a 2.5 V supply

• Powerdown self refresh modes

• Separate Row and Column buses for higher efficiency

• Over Drive Factor (ODF) support