STGIPS14K60T datasheet(5/20 Pages) STMICROELECTRONICS

No. de pieza	STGIPS14K60T

Descripción Electrónicos	SLLIMM (small low-loss intelligent molded module) IPM

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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DocID018534 Rev 4

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STGIPS14K60T

Electrical ratings

2

Electrical ratings

2.1

Absolute maximum ratings

Table 3. Inverter part

Symbol

Parameter

Value

Unit

VPN

Supply voltage applied between P - NU, NV, NW

450

V

VPN(surge) Supply voltage (surge) applied between P - NU, NV, NW

500

V

VCES

Each IGBT collector emitter voltage (VIN

(1) = 0)

1.

Applied between

HINi, LINi and GND for i = U, V, W

600

V

± IC

(2)

2.

Calculated according to the iterative formula:

Each IGBT continuous collector current at TC = 25°C

14

A

± ICP

(3)

3.

Pulse width limited by max junction temperature

Each IGBT pulsed collector current

30

A

PTOT

Each IGBT total dissipation at TC = 25°C

42

W

tscw

Short circuit withstand time, VCE = 0.5 V(BR)CES

TJ = 125 °C, VCC = Vboot= 15 V, VIN (1)= 0 ÷ 5 V

5µs

Table 4. Control part

Symbol

Parameter

Min.

Max.

Unit

VOUT

Output voltage applied between

OUTU, OUTV, OUTW - GND

Vboot - 21 Vboot + 0.3

V

VCC

Low voltage power supply

- 0.3

21

V

VCIN

Comparator input voltage

- 0.3

VCC + 0.3

V

Vboot

Bootstrap voltage

- 0.3

620

V

VIN

Logic input voltage applied between HIN, LIN and GND

- 0.3

15

V

VSD

SD voltage

- 0.3

15

V

dVOUT/dt Allowed output slew rate

50

V/ns

Table 5. Total system

Symbol

Parameter

Value

Unit

VISO

Isolation withstand voltage applied between each

pin and heatsink plate (AC voltage, t = 60 sec.)

2500

V

TC

Module case operation temperature

-40 to 125

°C

TJ

Power chips operating junction temperature

-40 to 150

°C

I

C TC



T

jmax



T

C

–

R

thj

c

–

V

CE sat

 max

 Tjmax

 IC TC









-------------------------------------------------------------------------------------------------------

=

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