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XX1001-BD Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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XX1001-BD Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 7 page • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz XX1001-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC & Output Power Testing 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010 RoHS* Compliant and 260°C Reflow Compatible Description M/A-COM Tech’s 18.0-21.0/36.0-42.0 GHz GaAs MMIC doubler integrates a doubler and 4-stage power amplifier. The device provides better than +26.0 dBm output power and has excellent fundamental rejection. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Ordering Information Part Number Package XX1001-BD-000V vacuum release gel paks XX1001-BD-EV1 evaluation board Chip Device Layout Absolute Maximum Ratings1 Parameter Absolute Max. Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 800 mA Gate Bias Voltage (Vg) +0.3 VDC Input Power (RF Pin) TBD Storage Temperature (Tstg) -65 °C to +165 °C Operating Temperature (Ta) -55 °C to MTTF Table1 Channel Temperature (Tch) MTTF Table1 (1) Channel temperature directly affects a device's MTTF. Channel tem- perature should be kept as low as possible to maximize lifetime. |
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