UF2815B datasheet(1/3 Pages) MA-COM

No. de pieza	UF2815B

Descripción Electrónicos	RF Power MOSFET Transistor

Download	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	MA-COM [M/A-COM Technology Solutions, Inc.]

Página de inicio	http://www.macomtech.com

Logo

1 / 3 page

1

RF Power MOSFET Transistor

15W, 100-500 MHz, 28V

M/A-COM Products

Released - Ver 08.07

UF2815B

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

• N-Channel enhancement mode device

• DMOS structure

• Lower capacitances for broadband operation

• Common source configuration

• Lower noise floor

• RoHS Compliant

• 100 MHz to 500 MHz operation

ABSOLUTE MAXIMUM RATINGS AT 25° C

Parameter

Rating

Drain-Source Voltage

65

Gate-Source Voltage

20

Drain-Source Current

4.2

Power Dissipation

48.6

Junction Temperature

200

Storage Temperature

-55 to 150

Thermal Resistance

3.6

Symbol

VDS

VGS

IDS

PD

TJ

TSTG

θJC

Units

V

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS AT 25°C

Parameter

Symbol

Min

Max

Units

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

65

-

V

VGS = 0.0 V , IDS = 6.0 mA

Drain-Source Leakage Current

IDSS

-

3.0

mA

VGS = 28.0 V , VGS = 0.0 V

Gate-Source Leakage Current

IGSS

-

3.0

µA

VGS = 20.0 V , VDS = 0.0 V

Gate Threshold Voltage

VGS(TH)

2.0

6.0

V

VDS = 10.0 V , IDS = 30.0 mA

Forward Transconductance

GM

.240

-

S

VDS = 10.0 V , IDS 300.0 mA , Δ VGS = 1.0V, 80 μs Pulse

Input Capacitance

CISS

-

21

pF

VDS = 28.0 V , F = 1.0 MHz

Output Capacitance

COSS

-

15

pF

VDS = 28.0 V , F = 1.0 MHz

Reverse Capacitance

CRSS

-

7.2

pF

VDS = 28.0 V , F = 1.0 MHz

Power Gain

GP

10

-

dB

VDD = 28.0 V, IDQ = 150.0 mA, POUT = 15.0 W F =500 MHz

Drain Efficiency

ŋD

50

-

%

VDD = 28.0 V, IDQ = 150.0 mA, POUT = 15.0 W F =500 MHz

Load Mismatch Tolerance

VSWR-T

-

20:1

-

VDD = 28.0 V, IDQ = 150.0 mA, POUT = 15.0 W F =500 MHz

F (MHz)

ZIN (Ω)

ZLOAD (Ω)

100

6.4-j25.0

22.0+j16.0

300

6.5-j12.0

15.0+j14.0

500

1.7-j10.5

8.0=j10.5

VDD=28V, IDQ=150 mA, POUT =15.0 W

TYPICAL DEVICE IMPEDANCES

ZIN is the series equivalent input impedance of the device

from gate to source.

ZLOAD is the optimum series equivalent load impedance

as measured from drain to ground.

Package Outline

LETTER

MILLIMETERS

INCHES

DIM

MIN

MAX

MIN

MAX

A

20.70

20.96

.815

.825

B

14.35

14.61

.565

.575

C

14.73

15.24

.580

.575

D

6.27

6.53

.247

.257

E

6.22

6.48

.245

.255

F

1.14

1.40

.045

.055

G

1.52

1.78

.060

.070

H

2.92

3.17

.115

.125

J

1.40

1.65

.055

.065

K

2.03

2.39

.080

.094

L

3.66

4.32

.144

.170

M

.10

.15

.004

.006

Número de pieza similar - UF2815B

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Tyco Electronics	UF2815B	203Kb / 3P	RF MOSFET Power Transistor, 15W, 28V 100-500MHz
M/A-COM Technology Solu...	UF2815B	211Kb / 3P	RF Power MOSFET Transistor 15W, 100-500 MHz, 28V
	UF2815B	211Kb / 3P	RF Power MOSFET Transistor
	UF2815B	638Kb / 4P	RF Power MOSFET Transistor

More results

Descripción similar - UF2815B

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
M/A-COM Technology Solu...	DU28200M	156Kb / 3P	RF Power MOSFET Transistor
	DU2840S	164Kb / 3P	RF Power MOSFET Transistor
	DU2860U	149Kb / 3P	RF Power MOSFET Transistor
	UF28100H	235Kb / 3P	RF Power MOSFET Transistor
	UF2805B-20	213Kb / 3P	RF Power MOSFET Transistor
	UF2840G	663Kb / 4P	RF Power MOSFET Transistor
	UF28150J	731Kb / 4P	RF Power MOSFET Transistor
	UF2820P	620Kb / 4P	RF Power MOSFET Transistor
	UF2820R	643Kb / 4P	RF Power MOSFET Transistor
	LF2805A	143Kb / 3P	RF Power MOSFET Transistor
	DU2860T	161Kb / 3P	RF Power MOSFET Transistor

More results

UF2815B Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

UF2815B Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

Número de pieza similar - UF2815B

Descripción similar - UF2815B

Html Pages

1 2 3

Datasheet Descarga

Enlace URL