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BCW61D Datasheet(PDF) 1 Page - Continental Device India Limited |
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BCW61D Datasheet(HTML) 1 Page - Continental Device India Limited |
1 / 3 page Continental Device India Limited Data Sheet Page 1 of 3 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) –VCES max. 32 V Collector–emitter voltage (open base) –VCEO max. 32 V Collector current (d.c.) –I C max. 200 mA Total power dissipation Ptot max. 250 mW Junction temperature Tj max. 150 °C Transition frequency at f: 100 MHz –VCE = 5 V; –IC = 10 mA fT typ. 180 MHz Noise figure at f = 1 kHz –VCE = 5 V; –IC = 200 mA F typ. 2 dB BCW61A BCW61B BCW61C BCW61D Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Número de pieza similar - BCW61D |
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Descripción similar - BCW61D |
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