Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
BCW30 Datasheet(PDF) 1 Page - Continental Device India Limited |
|
BCW30 Datasheet(HTML) 1 Page - Continental Device India Limited |
1 / 3 page Continental Device India Limited Data Sheet Page 1 of 3 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW29 = C1 BCW30 = C2 ABSOLUTE MAXIMUM RATINGS BCW29 BCW30 D.C. current gain at Tj = 25 °C > 120 215 –IC = 2 mA; –VCE = 5 V hFE < 260 500 Collector–base voltage (open emitter) –VCB0 max. 32 V Collector–emitter voltage (open base) –VCE0 max. 32 V Collector current (peak value) –ICM max. 200 mA Total power dissipation up to Tamb = 25 °C Ptot max, 250 mW Junction temperature Tj max. 150 ° C Transition frequency at f = 35 MHz –IC = 10 mA; –VCE = 5 V fT typ. 150 MHz Noise figure at RS = 2 kW –Ic = 200 mA; –VCE = 5 V; f = 1 kHz; B = 200 Hz F < 10 dB BCW29 BCW30 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3 2 1 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Número de pieza similar - BCW30 |
|
Descripción similar - BCW30 |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |