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BAS216WS Datasheet(PDF) 1 Page - Continental Device India Limited

No. de pieza BAS216WS
Descripción Electrónicos  SILICON EPITAXIAL SWITCHING DIODE
Download  3 Pages
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Fabricante Electrónico  CDIL [Continental Device India Limited]
Página de inicio  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BAS216WS Datasheet(HTML) 1 Page - Continental Device India Limited

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SILICON EPITAXIAL SWITCHING DIODE
BAS216WS
SOD-323
PLASTIC PCAKAGE
Marking
BAS216WS=W2 with cathode band
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
UNIT
VRRM
V
VR
V
IF
mA
IFRM
mA
Non Repetitive Peak Forward Surge Current
IFSM
at t=1s
A
at t=1ms
A
at t=1
µµs
A
Power Dissipation
Ptot
mW
Junction Temperature
Tj
ºC
Storage Temperature Range
Tstg
- 65 to +150
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
MIN
MAX
UNIT
Forward Voltage
VF
0.715
V
0.855
V
1.0
V
1.25
V
Reverse Current
IR
30
nA
1.0
µA
30
µA
50
µA
DYNAMIC CHARACTERISTICS
Diode Capacitance
Ctot
VR=0V, f=1MHz
1.5
pF
.
BAS216WS Rev010410E
IF=150mA
VR=75V
0.5
1.0
4.0
Repetitive Peak Forward Current
IF=10mA
IF=50mA
Measured at IR=1mA
IF=10mA, to IR=10mA
RL=100 Ω
VALUE
85
250
500
150
200
75
Continuous Forward Current
Repetitive Peak Reverse Voltage
Reverse Voltage
Reverse Recovery Time
4.0
ns
trr
TEST CONDITION
IF=1mA
VR=25V
VR=25V, Tj=150ºC
VR=75V, Tj=150ºC
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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