©

1994

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION

The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor

designed for high voltage switching applications.

FEATURES

Drain to Source Voltage (2SK2357/2358)

450/500

V

Gate to Source Voltage

±30

V

Drain Current (DC)

±6.0

A

Drain Current (pulse)*

±24

A

35

W

2.0

W

Channel Temperature

150

°C

Storage Temperature

–55 to +150

°C

Single Avalanche Current**

6.0

A

Single Avalanche Energy**

17

mJ

*

PW

≤ 10

µs, Duty Cycle ≤ 1 %

2SK2357/2SK2358

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

The information in this document is subject to change without notice.

Document No. D11392EJ3V0DS00 (3rd edition)

(Previous No. TC-2498)

Date Published March 1998 N CP(K)

Printed in Japan

Drain

Body

Diode

Gate

Source

10.0 ±0.3

0.7 ±0.1

2.7 ±0.2

4.5 ±0.2

3.2 ±0.2

2.5 ±0.1

0.65 ±0.1

1.3 ±0.2

1.5 ±0.2

2.54

2.54

1. Gate

2. Drain

3. Source

12

3

PACKAGE DIMENSIONS

(in millimeters)

MP-45F (ISOLATED TO-220)