STF100N10F7 datasheet(4/23 Pages) STMICROELECTRONICS

No. de pieza	STF100N10F7

Descripción Electrónicos	N-channel 100 V, 0.0068 廓 typ., 80 A, STripFET??VII DeepGATE??Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7

4/23

DocID023737 Rev 4

2

Electrical characteristics

(T

CASE

=25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source breakdown

voltage (V

GS

= 0)

I

D

= 250 μA

100

-

V

I

DSS

Zero gate voltage drain

current (V

GS

= 0)

V

DS

= 100 V

V

DS

= 100 V; T

C

=125 °C

1

100

μA

I

GSS

Gate body leakage current

(V

DS

= 0)

V

GS

= 20 V

100

nA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA2.5

4.5

V

R

DS(on)

Static drain-source on-

resistance

For D

2

PAK, DPAK and

TO-220

V

GS

= 10 V, I

D

= 40 A

For TO-220-FP

V

GS

= 10 V, I

D

= 22.5 A

0.0068

0.008

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

=50 V, f=1 MHz,

V

GS

=0

-

4369

-

pF

C

oss

Output capacitance

-

823

-

pF

C

rss

Reverse transfer

capacitance

-36

-

pF

Q

g

Total gate charge

V

DD

=50 V, I

D

= 80 A

V

GS

=10 V

Figure 18

-61

-

nC

Q

gs

Gate-source charge

-

26

-

nC

Q

gd

Gate-drain charge

-

13

-

nC

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

DD

=50 V, I

D

= 40 A,

R

G

=4.7

Ω, V

GS

= 10 V

Figure 17

-27

-

ns

t

r

Rise time

-

40

-

ns

t

d(off)

Turn-off delay time

-

46

-

ns

t

f

Fall time

-

15

-

ns

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