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2SK2413 Datasheet(PDF) 2 Page - NEC |
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2SK2413 Datasheet(HTML) 2 Page - NEC |
2 / 8 page 2SK2413 2 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS Drain to Source On-Resistance RDS(on)1 50 70 VGS = 10 V, ID = 5.0 A Drain to Source On-Resistance RDS(on)2 70 95 VGS = 4 V, ID = 5.0 A Gate to Source Cutoff Voltage VGS(off) 1.0 1.6 2.0 VDS = 10 V, ID = 1 mA Forward Transfer Admittance | yfs | 7.0 12 VDS = 10 V, ID = 5.0 A Drain Leakage Current IDSS ±10 VDS = 60 V, VGS = 0 Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0 Input Capacitance Ciss 860 VDS = 10 V Output Capacitance Coss 440 VGS = 0 Reverse Transfer Capacitance Crss 110 f = 1 MHz Turn-On Delay Time td(on) 15 ID = 5.0 A Rise Time tr 90 VGS(on) = 10 V Turn-Off Delay Time td(off) 75 VDD = 30 V Fall Time tf 30 RG = 10 Ω Total Gate Charge QG 24 ID = 20 A Gate to Source Charge QGS 3.0 VDD = 48 V Gate to Drain Charge QGD 6.0 VGS = 10 V Body Diode Forward Voltage VF(S-D) 1.0 IF = 10 A, VGS = 0 Reverse Recovery Time trr 95 IF = 10 A, VGS = 0 Reverse Recovery Charge Qrr 250 di/dt = 100 A/ µs Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time RG = 25 Ω 50 Ω PG L VDD VGS = 20 → 0 V BVDSS IAS ID VDS Starting Tch RG = 10 Ω D.U.T. PG. 0 t RL VDD VGS t = 1 s Duty Cycle ≤ 1 % ID 0 0 10 % 10 % 90 % 90 % 10 % 90 % ID VGS (on) td (off) td (on) ton toff tf tr Test Circuit 3 Gate Charge D.U.T. RL VDD 50 Ω IG = 2 mA PG. VDD VGS RG D.U.T. VGS Wave Form ID Wave Form µ UNIT m Ω m Ω V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC The application circuits and their parameters are for references only and are not intended for use in actual design-in's. |
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