BF820 datasheet(2/2 Pages) GE | Small Signal Transistors (NPN)

2 page

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

BF820, BF822

Symbol

Min.

Typ.

Max.

Unit

Collector-Base Breakdown Voltage

BF820

at IC = 100 µA, IB = 0

BF822

V(BR)CBO

300

250

–

Collector-Emitter Breakdown Voltage

BF822

at IC = 10 mA, IE = 0

V(BR)CEO

250

–

Collector-Emitter Breakdown Voltage

BF820

at RBE = 2.7 kΩ, IC = 10 mA

V(BR)CER

300

––V

Emitter-Base Breakdown Voltage

at IE = 100 µA, IB = 0

V(BR)EBO

5––V

Collector-Base Cutoff Current

at VCB = 200 V, IE = 0

ICBO

––10

Collector-Emitter Cutoff Current

at RBE = 2.7 kΩ, VCE = 250 V

at RBE = 2.7 kΩ, VCE = 200 V, Tj = 150 °C

ICER

µA

Collector Saturation Voltage

at IC = 30 mA, IB = 5 mA

VCEsat

––0.6

DC Current Gain

at VCE = 20 V, IC = 25 mA

hFE

–––

Gain-Bandwidth Product

at VCE = 10 V, IC = 10 mA

––MHz

Feedback Capacitance

at VCE = 30 V, IC = 0, f = 1 MHz

Cre

––1.6

Thermal Resistance Junction to Ambient Air

RthJA

–

4301)

K/W

1) Device on fiberglass substrate, see layout

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

.59 (15)

0.2 (5)

.03 (0.8)

.30 (7.5)

.12 (3)

.04 (1)

.06 (1.5)

.20 (5.1)

.08 (2)

.04 (1)

Dimensions in inches (millimeters)

.47 (12)

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