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ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified SYMBOL MIN. .MAX. UNIT Collector-Emitter Breakdown Voltage at IC = 1 mA, IB = 0 V(BR)CEO 80 – V Emitter-Base Breakdown Voltage at IE = 100 µA, IC = 0 V(BR)EBO 4.0 – V Collector-Emitter Cutoff Current VCE = 60 V, IB = 0 ICES – 100 nA Collector-Base Cutoff Current VCB = 80 V, IE = 0 ICBO – 100 nA Collector Saturation Voltage at IC = 100 mA, IB = 10 mA VCEsat – 0.25 V Base-Emitter On Voltage at IC = 10 mA, IB = 1 mA VBE(on) – 1.2 V DC Current Gain at VCE = 1 V, IC = 10 mA hFE 100 – – at VCE = 1 V, IC = 100 mA hFE 100 – – Gain-Bandwidth Product at VCE = 2 V, IC = 10 mA, f = 100 MHz fT 100 – MHz MMBTA06 0.59 (15) 0.2 (5) 0.03 (0.8) 0.30 (7.5) 0.12 (3) .04 (1) 0.06 (1.5) 0.20 (5.1) .08 (2) .08 (2) .04 (1) 0.47 (12) |
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